Imballaġġ: Kaxxa tal-Kartuna
Produttività: 1000000000 pcs/week
Trasport: Ocean,Land,Air
Post ta 'Oriġini: Iċ-Ċina
Abbiltà tal-Provvista: 7000000000 pcs/week
Ċertifikat: GB/T19001-2008/ISO9001:2008
Kodiċi HS: 8541401000
Port: SHENZHEN
Tip ta 'Ħlas: T/T,Paypal,Western Union
Incoterm: FOB,EXW,FCA
Mudell Nru.: 503IRBT-85L/12I60-45A
Brand: L-aħjar LED
Tip Ta 'provvista: Manifattur oriġinali
Materjali Ta 'referenza: skeda teknika, Ritratt
Post Tal-oriġini: Iċ-Ċina
Speċi: LED
Tip Ta 'Pakkett: Through Hole
Wavelength: 850nm
Power: 0.2W
Certification: RoHs
Luminous Intensity: High Directivity
Formation: Gold Thread
Type: Infrared LED
Current: 60mA
Radiation Intensity: 20-30mw/sr
Polarity: Short Pin Mark Cathode
Type Of Lens: Blue Lens
Beam Width: 45 Degree
Antistatic Bag: 1000PCS/Bag
Voltage: 1.6V
| Unitajiet tal-Bejgħ: | Piece/Pieces |
|---|---|
| Tip ta' Pakkett: | Kaxxa tal-Kartuna |
|
- Size: 5.0*H8.7mm - Chip Number:1 chips - Color: 850nm - Type: Blue clear - Chip brand: Tyntek |
- Different color are available - Different wavelength are available
- Warranty: 5 Years
- RoHS, REACH, EN62471 |
- Uniform light output - Long life-solid state reliability
- Low Power consumption
-Anti UV epoxy resin package -High temperature resistance |
* Il-kuluri fir-ritratt ingħataw bil-kamera, jekk jogħġbok ħu kulur li jarmi bħala standard.
Klassifikazzjonijiet massimi assoluti f'Ta = 25 ℃
|
Parameter |
Symbol |
Rating |
|
Power Dissipation |
Pd |
80mW |
|
Pulse Forward Current |
IFP |
1000mA |
|
Forward Current |
IF |
60mA |
|
Reverse Voltage |
VR |
5V |
|
Junction Temperature |
Tj |
115°C |
|
Operating Tempertature |
Topr |
-40 - +80°C |
|
Storage Tempertature |
Tstg |
-40 - +100°C |
|
Soldering Temperature |
Tsol |
260°C |
|
Electro-Static-Discharge(HBM) |
ESD |
2000v |
|
Warranty |
Time |
5Years |
|
Antistatic bag |
Piece |
1000Back |
|
*Pulse Forward Current Condition:Duty 1% and Pulse Width=10us. |
||
|
*Soldering Condition:Soldering condition must be completed with 3 seconds at 260°C |
||
Karatteristiċi ottiċi u elettriċi ( T C = 25 ℃ )
|
Parameter |
Symbol |
Min |
Typ |
Max |
Unit |
Test Condition |
|
Forward Voltage |
VF |
1.5 |
|
1.9 |
V |
IF=50mA |
|
Pulse Forward Voltage |
VF |
|
2.6 |
|
V |
IFP=500mA |
|
Radiant Intensity |
IE |
20 |
|
30 |
mw/sr |
IF=50mA |
|
Peak Wavelength |
λP |
840 |
850 |
860 |
nm |
IF=50mA |
|
Total Radiated Power |
PO |
|
6 |
|
mw |
IF=50mA |
|
Half Width |
Dl |
|
50 |
|
nm |
IF=50mA |
|
Viewing Half Angle |
2q1/2 |
|
±22 |
|
deg |
IF=50mA |
|
Reverse Current |
IR |
|
|
5 |
uA |
VR=5V |
|
Rise Time |
Tr |
|
25 |
|
ns |
IF=50mA |
|
Fall Time |
Tf |
|
13 |
|
ns |
IF=50mA |
|
*Luminous Intensity is measured by ZWL600. |
||||||
|
*q1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity. |
||||||
|
*lD is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device. |
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